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dc.contributor.author이성재-
dc.date.accessioned2018-04-03T07:51:05Z-
dc.date.available2018-04-03T07:51:05Z-
dc.date.issued2014-09-
dc.identifier.citationAPPLIED PHYSICS LETTERS, 2014, 105(10), P.103101-1~103101-5en_US
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttp://aip.scitation.org/doi/abs/10.1063/1.4895119-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/57363-
dc.description.abstractWe designed and fabricated gravimetric sensors composed of silicon (Si) microbeams surrounded by silicon nitride (SiN) anchors. The oscillation properties of the fabricated devices show that a single oscillation mode originating from quasi-one-dimensional microbeams appears at an applied alternating electric field, which motion is well matched to the theoretical predictions and is much different from the dimensionally mixed oscillation modes in normal non-anchored devices. In addition, in order to elucidate the possibilities of the devices for mass sensing applications, we measured the frequency shift as a function of mass loading in a self-assembled monolayer of 3-aminopropyltrimethoxysilane and Au nanoparticles. The resulting limit of detection was 1.05 x 10(-18) g/Hz, which is an extremely high value for micro electromechanical system gravimetric sensors relative to the normal ones. (C) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipThe research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2013K000344), by a Korea Research Foundation Grant funded by the Korean Government (KRF-2007-314-C00064), and by the Ministry of Trade, Industry and Energy (Grant No. 10043371).en_US
dc.language.isoenen_US
dc.publisherAMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USAen_US
dc.subjectMEMS RESONATORSen_US
dc.subjectNANOELECTROMECHANICAL SYSTEMSen_US
dc.subjectQUALITY FACTORSen_US
dc.subjectFABRICATIONen_US
dc.subjectCANTILEVERSen_US
dc.titleThe control of oscillation mode in silicon microbeams using silicon nitride anchoren_US
dc.typeArticleen_US
dc.relation.volume105-
dc.identifier.doi10.1063/1.4895119-
dc.relation.page103101-103101-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorBaek, In-Bok-
dc.contributor.googleauthorLee, Bong Kuk-
dc.contributor.googleauthorKim, Yarkyeon-
dc.contributor.googleauthorAhn, Chang-Geun-
dc.contributor.googleauthorKim, Young Jun-
dc.contributor.googleauthorYoon, Yong Sun-
dc.contributor.googleauthorJang, Won Ik-
dc.contributor.googleauthorKim, Hakseong-
dc.contributor.googleauthorLee, Sang Wook-
dc.contributor.googleauthorLee, Seongjae-
dc.relation.code2014025338-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidleesj-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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