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Improvement of thermal stability of nickel silicide film using NH3 plasma treatment

Title
Improvement of thermal stability of nickel silicide film using NH3 plasma treatment
Author
전형탁
Keywords
NISI FILMS; TEMPERATURE; IMPLANTATION; DEPOSITION; SUBSTRATE; COSI2; LAYER
Issue Date
2014-09
Publisher
JAPAN SOCIETY OF APPLIED PHYSICS
Citation
Japanese Journal of Applied Physics, 2014, 53(9), P.095506-1~095506-5
Abstract
In this study, the effects of NH3 plasma pre-treatment on the characteristics of NiSi films were investigated. Nickel film was deposited on a Si(100) substrate by meal-organic chemical vapor deposition (MOCVD) using Ni(Pr-i-DAD)(2) as a Ni precursor and NH3 gas as a reactant. Before the Ni deposition, silicon substrate was treated by NH3 plasma with various flow rates to adjust the amount of inserted hydrogen and nitrogen atoms. The Ni films showed a considerable low sheet resistance around 12 Omega/square, irrespective of the NH3 plasma pre-treatment conditions. The sheet resistance of the all Ni films was decreased after annealing at 500 degrees C due to formation of a low resistive NiSi phase. NiSi films with a high flow rate of NH3 plasma pre-treatment exhibited a lower sheet resistance and smoother interface between NiSi and the Si substrate than the low flow rate of the NH3 plasma pre-treated NiSi films because lots of nitrogen atoms incorporated at grain boundary of NiSi which result in reduce total surface/interface energy of NiSi and enhancement interface characteristics. (C) 2014 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.53.095506http://hdl.handle.net/20.500.11754/57291
ISSN
0021-4922
DOI
10.7567/JJAP.53.095506
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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