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Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents

Title
Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents
Other Titles
TaOx
Author
전형탁
Keywords
contacts; resistive switching; RRAM; TaOx
Issue Date
2014-09
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Citation
physica status solidi (a), 2014, 211(9), P.2189-2194
Abstract
We demonstrate enhanced resistive switching (RS) stability, as measured by distribution, power consumption, and memory window, using different oxygen contents in a Ta oxide (TaOx) layer with a Pt top electrode and a TiN bottom electrode. The stability of the Pt/TaOx/TiN RRAM device increases as the oxygen contents of the TaOx layer increase. When oxygen is introduced during TaOx deposition, conventional bipolar RS (BRS) switches to self?compliant BRS, and distribution is improved within 200 repeated RS cycles. We investigate the conduction mechanisms for both a low resistance state (LRS) and a high resistance state (HRS). Ohmic conduction in the LRS and for the low bias region in the HRS corresponds to the conductive filament (CF) theory, while Poole?Frenkel (PF) conduction in the high bias region of HRS is the dominant conduction mechanism. A possible RS mechanism with oxygen ion drift is discussed.
URI
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201431260http://hdl.handle.net/20.500.11754/57279
ISSN
0031-8965; 1538-6724
DOI
10.1002/pssa.201431260
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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