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dc.contributor.author박재근-
dc.date.accessioned2018-04-03T07:25:07Z-
dc.date.available2018-04-03T07:25:07Z-
dc.date.issued2013-06-
dc.identifier.citationApplied Physics Express, 2013, 6(6), P.67001-0670013en_US
dc.identifier.issn1882-0778-
dc.identifier.urihttp://iopscience.iop.org/article/10.7567/APEX.6.067001/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/57124-
dc.description.abstractThe p-type channel of a nanoparticle organic memory field effect transistor (NOMFET) was fabricated by evaporating a thin Au layer, curing at 700 degrees C, and evaporating pentacene. The resulting NOMFET showed a facilitating ac-pulse drain current after programming and a depressing ac-pulse drain current after erasing that mimicked the behavior of biological synapses. The facilitating and depressing current ratio could be adjusted by using the program or erase voltage; i.e., the facilitating current increased with the program voltage, and the depressing current ratio increased with the erase voltage. (C) 2013 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis research was supported by the Converging Research Center Program funded by the Ministry of Education, Science and Technology (Project No. 2012K001445) and the Brain Korea 21 Project in 2012.en_US
dc.language.isoenen_US
dc.publisherJapan SOC Applied Physicsen_US
dc.subjectNETWORKSen_US
dc.titleBiological Synapse Behavior of Nanoparticle Organic Memory Field Effect Transistor Fabricated by Curingen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume6-
dc.identifier.doi10.7567/APEX.6.067001-
dc.relation.page1-3-
dc.relation.journalAPPLIED PHYSICS EXPRESS-
dc.contributor.googleauthorKwon, Kyoung-Cheol-
dc.contributor.googleauthorLee, Jong-Sun-
dc.contributor.googleauthorKim, Chul Geun-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2013008976-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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