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Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes

Title
Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes
Other Titles
Al2O3
Author
전형탁
Issue Date
2014-08
Publisher
American Carbon Committee
Citation
Carbon, 2014, 75, P.209 - 216
Abstract
Resistive switching random access memory (RRAM) with oxygen ion drift under electric (E)-field has been intensively studied. However, the findings are insufficient because redox reaction by oxygen ion drift occurs beneath the top electrode, and it is difficult to analyze with a nondestructive method. Therefore, an effective method to circumvent this difficulty is suggested in this study with a Pt/Al 2 O 3 /TiO 2 /Pt device using a single layer graphene (SLG) top electrode. Based on results from spectroscopic analyses, the SLG serves as not only an interface free electrode, but also as a highly effective indicator for proving O - ion drift motion in response to the E-field in RRAM. The origin of asymmetric resistive switching is due to a redox reaction at the interface by oxygen ion drift. The endurance and operation-current distribution are significantly improved with increased thickness of the Al 2 O 3 insertion layer, which provides carrier tunneling barrier height. The resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) is greater than one order of magnitude in a log scale within 1800 cycles. This result demonstrates that control of a localized charge tunneling barrier is a key factor for reliable resistive switching of the scaled-down RRAM.
URI
https://www.sciencedirect.com/science/article/pii/S0008622314003121?via%3Dihubhttp://hdl.handle.net/20.500.11754/56929
ISSN
0008-6223
DOI
10.1016/j.carbon.2014.03.055
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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