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Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates

Title
Dielectric function of Si1-xGex films grown on silicon-on-insulator substrates
Author
박재근
Issue Date
2014-06
Publisher
AMER INST PHYSICS, CIRCULATION &FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
JOURNAL OF APPLIED PHYSICS,115(23),6pages
Abstract
The dielectric functions of undoped and P-doped Si1-xGex (SiGe) films with a compressive strain on silicon-on-insulator (SOI) substrates are obtained by using spectroscopic ellipsometry. The respective Kato-Adachi and Tauc-Lorentz models are best fitted to the undoped and P-doped SiGe films to obtain their complex dielectric functions. The undoped SiGe films are characterized by multimodal peaks in the dielectric function, whereas the P-doped SiGe films exhibit only a broad peak. Further, the E-0 and E-1 critical points (CPs) of the undoped SiGe films are strongly dependent on the Ge concentration, whereas the E-2 CPs are independent of concentration. The E-0 and E-2 CPs in the undoped SiGe films on an SOI substrate are lower than those of SiGe on a bulk-Si substrate owing to the higher strain. For P doping in SiGe, its dose causes non-monotonic variations in E-g and E-0. (C) 2014 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/10.1063/1.4881457http://hdl.handle.net/20.500.11754/56143
ISSN
0021-8979; 1089-7550
DOI
10.1063/1.4881457
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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