27 0

Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure

Title
Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
Author
박진성
Keywords
OXIDE SEMICONDUCTOR; ROOM-TEMPERATURE; STATES
Issue Date
2013-03
Publisher
Amer INST Physics
Citation
Applied Physics Letters, 2013, 102(10), 102102
Abstract
The device performance and bias instability of radio frequency (RF) sputtered Ta doped InZnO thin film transistors (TFTs) were investigated as a function of deposition process pressure. Under low process pressure, the electrical characteristics of TaInZnO TFTs were enhanced with amorphous physical structure and the decrease of oxygen deficient bonding states. These changes were correlated with the evolution of electronic structure, such as band alignment and band edge states below the conduction band. As the process pressure decreased, the energy difference between conduction band minimum and Fermi level and the band edge states was decreased. In particular, the relative energy level of band edge states was moved into the deep level within bandgap, with the increase of process pressure.
URI
http://aip.scitation.org/doi/10.1063/1.4794941http://hdl.handle.net/20.500.11754/55078
ISSN
0003-6951
DOI
10.1063/1.4794941
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE