Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조준형 | - |
dc.date.accessioned | 2018-04-02T07:55:23Z | - |
dc.date.available | 2018-04-02T07:55:23Z | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Physical Review Letters, 2013, 110(11), P.116801-116801 | en_US |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.issn | 1079-7114 | - |
dc.identifier.uri | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.110.116801 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/54981 | - |
dc.description.abstract | The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 82 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 41 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (NRF-2011-0015754). The calculations wereperformed by the KISTI supercomputing center through the strategic support program (KSC-2012-C3-11) for supercomputing application research. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer Physical SOC | en_US |
dc.subject | METAL-INSULATOR-TRANSITION | en_US |
dc.subject | QUANTUM CHAINS | en_US |
dc.subject | ELECTRON | en_US |
dc.subject | SURFACE | en_US |
dc.subject | INSTABILITY | en_US |
dc.subject | MOLECULES | en_US |
dc.subject | SILICON | en_US |
dc.title | Driving Force of Phase Transition in Indium Nanowires on Si(111) | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 110 | - |
dc.identifier.doi | 10.1103/PhysRevLett.110.116801 | - |
dc.relation.page | 116801-116801 | - |
dc.relation.journal | PHYSICAL REVIEW LETTERS | - |
dc.contributor.googleauthor | Kim, Hyun-Jung | - |
dc.contributor.googleauthor | Cho, Jun-Hyung | - |
dc.relation.code | 2013011684 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | chojh | - |
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