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Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Title
Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods
Author
박진섭
Keywords
CHEMICAL LIFT-OFF; SAPPHIRE; FILMS; LAYERS
Issue Date
2013-03
Publisher
IOP Publishing LTD
Citation
Journal of Physics D: Applied Physics, 2013, 46(15), P.151104-151107
Abstract
We report on the local stress distribution in a GaN-based vertical light-emitting diode (V-LED) fabricated using two types of separation methods: a chemical lift-off (CLO) procedure and a laser lift-off (LLO) technique. The CLO LED exhibits a stronger donor-bound exciton (D0X) emission than the LLO LED, owing to its textured surface morphology and lower amount of damage to the structure. On the basis of the photoluminescence and Raman spectroscopy results, we determine that the CLO GaN LED has an 82 MPa lower residual stress than the LLO GaN LED. Therefore, the CLO technique can be considered as a more effective method to fabricate stress-relieved high-brightness LEDs.
URI
http://iopscience.iop.org/article/10.1088/0022-3727/46/15/155104/metahttp://hdl.handle.net/20.500.11754/54888
ISSN
0022-3727
DOI
10.1088/0022-3727/46/15/155104
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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