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The effect of Nb doping on the performance and stability of TiOx devices

Title
The effect of Nb doping on the performance and stability of TiOx devices
Author
박진성
Keywords
THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; BIAS TEMPERATURE INSTABILITY; DOPED ANATASE TIO2; METAL; DIOXIDE
Issue Date
2013-06
Publisher
IOP Publishing LTD
Citation
Journal of Physics. D, Applied Physics, 2013, 46(29), P.295102-295200
Abstract
The effect of niobium (Nb) doping on the performance and stability of TiO x -based thin-film transistors (TFTs) was studied. While sputtered TiO x has an initial amorphous phase and begins to crystallize to anatase at an annealing temperature of 450 °C, Nb-doped TiO x preserves the amorphous structure up to annealing temperatures as high as 550 °C. TFT devices fabricated using Nb-doped TiO x as the active layer exhibit higher field-effect mobility and better stability upon negative and positive bias stress compared to pure TiO x devices. X-ray photoelectron spectroscopy analyses indicate that Nb doping induces higher levels of oxygen deficiency and a considerable amount of defect states near the valence band, which cannot account for the higher device stability. It is thus suggested that the grain boundaries in crystalline TiO x TiO x may act as the major charge traps, which induce larger shifts in threshold voltage ( V th ) upon bias stress.
URI
http://iopscience.iop.org/article/10.1088/0022-3727/46/29/295102/metahttp://hdl.handle.net/20.500.11754/54704
ISSN
0022-3727
DOI
10.1088/0022-3727/46/29/295102
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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