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dc.contributor.author오혜근-
dc.date.accessioned2018-03-30T00:26:54Z-
dc.date.available2018-03-30T00:26:54Z-
dc.date.issued2016-05-
dc.identifier.citationJOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v. 15, No. 2, Article no. 023503en_US
dc.identifier.issn1932-5150-
dc.identifier.issn1932-5134-
dc.identifier.urihttps://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-15/issue-2/023503/Mask-three-dimensional-effects-of-etched-multilayer-mask-for-16/10.1117/1.JMM.15.2.023503.full?SSO=1-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/54035-
dc.description.abstractThe absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal-vertical (H-V) bias and position shifts through focus. To overcome these problems, we revisit the etched multilayer mask structure. We focus on the etched multilayer mask structure process down to a 16-nm half-pitch at a 0.33 numerical aperture, and we compare the results from this mask to those obtained with a conventional mask. Removing the absorber stack makes the H-V bias of an etched multilayer mask smaller than that of a conventional absorber mask for a 16-nm half-pitch. Thus, the etched multilayer mask can be used to reduce the mask 3-D effects. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.language.isoen_USen_US
dc.publisherSPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERSen_US
dc.subjectextreme ultraviolet mask structureen_US
dc.subjectetched multilayer masken_US
dc.subjectextreme ultraviolet lithographyen_US
dc.subjectSIMULATIONen_US
dc.titleMask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithographyen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume15-
dc.identifier.doi10.1117/1.JMM.15.2.023503-
dc.relation.page235031-235035-
dc.relation.journalJOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS-
dc.contributor.googleauthorKim, Guk-Jin-
dc.contributor.googleauthorKim, In-Seon-
dc.contributor.googleauthorYeung, Michael-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2016007288-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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