Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2018-03-30T00:26:54Z | - |
dc.date.available | 2018-03-30T00:26:54Z | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v. 15, No. 2, Article no. 023503 | en_US |
dc.identifier.issn | 1932-5150 | - |
dc.identifier.issn | 1932-5134 | - |
dc.identifier.uri | https://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-15/issue-2/023503/Mask-three-dimensional-effects-of-etched-multilayer-mask-for-16/10.1117/1.JMM.15.2.023503.full?SSO=1 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/54035 | - |
dc.description.abstract | The absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal-vertical (H-V) bias and position shifts through focus. To overcome these problems, we revisit the etched multilayer mask structure. We focus on the etched multilayer mask structure process down to a 16-nm half-pitch at a 0.33 numerical aperture, and we compare the results from this mask to those obtained with a conventional mask. Removing the absorber stack makes the H-V bias of an etched multilayer mask smaller than that of a conventional absorber mask for a 16-nm half-pitch. Thus, the etched multilayer mask can be used to reduce the mask 3-D effects. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | en_US |
dc.subject | extreme ultraviolet mask structure | en_US |
dc.subject | etched multilayer mask | en_US |
dc.subject | extreme ultraviolet lithography | en_US |
dc.subject | SIMULATION | en_US |
dc.title | Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1117/1.JMM.15.2.023503 | - |
dc.relation.page | 235031-235035 | - |
dc.relation.journal | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | - |
dc.contributor.googleauthor | Kim, Guk-Jin | - |
dc.contributor.googleauthor | Kim, In-Seon | - |
dc.contributor.googleauthor | Yeung, Michael | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2016007288 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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