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Ta thickness dependent perpendicular magnetic anisotropic features in Ta/CoFeB/MgO free layer stacks

Title
Ta thickness dependent perpendicular magnetic anisotropic features in Ta/CoFeB/MgO free layer stacks
Other Titles
CoFeB
Author
홍진표
Keywords
Annealing stability; Perpendicular magnetic anisotropy; Ta thickness
Issue Date
2014-11
Publisher
Elsevier B.V.
Citation
Thin Solid Films, July 2015, 587, P.39-42
Abstract
We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. •We observed changes in the diffusion behavior with regard to Ta seed layer thickness.•It was observed that a thinner Ta seed layer induced more annealing-stable features.•However, ultra-thin (0.75nm) Ta shows unstable characteristics about the annealing process.•It was possibly due to a rugged interface of the Ta layer by the island growth process.
URI
https://www.sciencedirect.com/science/article/pii/S0040609014012231http://hdl.handle.net/20.500.11754/53745
ISSN
0040-6090
DOI
10.1016/j.tsf.2014.11.068
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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