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dc.contributor.author정두석-
dc.date.accessioned2018-03-29T04:36:45Z-
dc.date.available2018-03-29T04:36:45Z-
dc.date.issued2016-04-
dc.identifier.citationNANOSCALE, v.8, no.18, page.9629-9640en_US
dc.identifier.issn2040-3364-
dc.identifier.issn2040-3372-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01278G#!divAbstract-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/53635-
dc.description.abstractA proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre-and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration.en_US
dc.description.sponsorshipD. S. J. acknowledges a Korea Institute of Science and Technology grant (grant number 2E26400). C. S. H acknowledges the National Research Foundation of Korea (NRF) (grant number 2012K1A1A2040157, and 2014R1A2A1A10052979).en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectRESISTIVE SWITCHING MEMORIESen_US
dc.subjectSILICON NEURONen_US
dc.subjectSYNAPTIC PLASTICITYen_US
dc.subjectSPIKING NEURONSen_US
dc.subjectMODELen_US
dc.subjectSYNAPSESen_US
dc.subjectDEVICEen_US
dc.subjectCHALLENGESen_US
dc.subjectNANOIONICSen_US
dc.subjectCIRCUITSen_US
dc.titleRelaxation oscillator-realized artificial electronic neurons, their responses, and noiseen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c6nr01278g-
dc.relation.journalNANOSCALE-
dc.contributor.googleauthorLim, Hyungkwang-
dc.contributor.googleauthorAhn, Hyung-Woo-
dc.contributor.googleauthorKornijcuk, Vladimir-
dc.contributor.googleauthorKim, Guhyun-
dc.contributor.googleauthorSeok, Jun Yeong-
dc.contributor.googleauthorKim, Inho-
dc.contributor.googleauthorHwang, Cheol Seong-
dc.contributor.googleauthorJeong, Doo Seok-
dc.relation.code2016000163-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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