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Wafer-scale growth of MoS2 thin films by atomic layer deposition

Title
Wafer-scale growth of MoS2 thin films by atomic layer deposition
Author
정두석
Keywords
TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER; MONOLAYER; ELECTRONICS; TRANSISTORS; SUBSTRATE; OXIDE; CVD
Issue Date
2016-04
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.8, no.20, page.10792-10798
Abstract
The wafer-scale synthesis of MoS2 layers with precise thickness controllability and excellent uniformity is essential for their application in the nanoelectronics industry. Here, we demonstrate the atomic layer deposition (ALD) of MoS2 films with Mo(CO)(6) and H2S as the Mo and S precursors, respectively. A self-limiting growth behavior is observed in the narrow ALD window of 155-175 degrees C. Long H2S feeding times are necessary to reduce the impurity contents in the films. The as-grown MoS2 films are amorphous due to the low growth temperature. Post-annealing at high temperatures under a H2S atmosphere efficiently improves the film properties including the crystallinity and chemical composition. An extremely uniform film growth is achieved even on a 4 inch SiO2/Si wafer. These results demonstrate that the current ALD process is well suited for the synthesis of MoS2 layers for application in industry.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01346E#!divAbstracthttp://hdl.handle.net/20.500.11754/53602
ISSN
2040-3364; 2040-3372
DOI
10.1039/c6nr01346e
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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