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Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

Title
Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions
Author
정두석
Keywords
RESISTIVE SWITCHING MEMORIES; ELECTRORESISTANCE; INTERFACE; MAGNETORESISTANCE; HETEROSTRUCTURES; POLARIZATION; MECHANISMS
Issue Date
2016-04
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.8, no.20, page.10799-10805
Abstract
A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb (Zr0.3Ti0.7)O-3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01277A#!divAbstracthttp://hdl.handle.net/20.500.11754/53599
ISSN
2040-3364; 2040-3372
DOI
10.1039/c6nr01277a
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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