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dc.contributor.author정두석-
dc.date.accessioned2018-03-28T12:36:23Z-
dc.date.available2018-03-28T12:36:23Z-
dc.date.issued2013-09-
dc.identifier.citationNANOTECHNOLOGY 권: 24 호: 38 특별호: SIen_US
dc.identifier.issn0957-4484-
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/24/38/384005-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/53436-
dc.description.abstractChemical synapses are important components of the large-scaled neural network in the hippocampus of the mammalian brain, and a change in their weight is thought to be in charge of learning and memory. Thus, the realization of artificial chemical synapses is of crucial importance in achieving artificial neural networks emulating the brain's functionalities to some extent. This kind of research is often referred to as neuromorphic engineering. In this study, we report short-term memory behaviours of electrochemical capacitors (ECs) utilizing TiO2 mixed ionic-electronic conductor and various reactive electrode materials e. g. Ti, Ni, and Cr. By experiments, it turned out that the potentiation behaviours did not represent unlimited growth of synaptic weight. Instead, the behaviours exhibited limited synaptic weight growth that can be understood by means of an empirical equation similar to the Bienenstock-Cooper-Munro rule, employing a sliding threshold. The observed potentiation behaviours were analysed using the empirical equation and the differences between the different ECs were parameterized.en_US
dc.description.sponsorshipKorea Institute of Science and Technologyen_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectTITANIUM-DIOXIDEen_US
dc.subjectNEURAL NETWORKSen_US
dc.subjectMEMRISTORen_US
dc.subjectPOTENTIATIONen_US
dc.subjectSYNAPSEen_US
dc.subjectHIPPOCAMPUSen_US
dc.subjectSATURATIONen_US
dc.subjectTRANSISTORen_US
dc.subjectMECHANISMen_US
dc.subjectSYSTEMSen_US
dc.titleShort-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding thresholden_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/24/38/384005-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorLim, Hyungkwang-
dc.contributor.googleauthorKim, Inho-
dc.contributor.googleauthorKim, Jin-Sang-
dc.contributor.googleauthorHwang, Cheol Seong-
dc.contributor.googleauthorJeong, Doo Seok-
dc.relation.code2013011387-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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