Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage

Title
Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage
Author
신동수
Keywords
carrier spill-over; efficiency droop; open-circuit voltage; resonant photoluminescence
Issue Date
2013-10
Publisher
WILEY-V C H VERLAG GMBH
Citation
Physica Status Solidi A, 2013, 210(10), P.2204-2208
Abstract
In InGaN-based light-emitting diodes (LEDs), carrier leakage to the outside of the active quantum wells (QWs) has been considered as one of the dominant carrier loss mechanisms at high current densities. In order to verify the carrier spill-over phenomenon, we compared the electroluminescence (EL) efficiency, the resonant photoluminescence (PL) efficiency, and the open-circuit voltage as functions of current, temperature, and excitation laser power. Very similar tendencies were experimentally observed among the three physical quantities, which implied that carriers were spilt over out of the QWs even in the resonant PL experiment.
URI
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201329187
ISSN
1862-6300; 1862-6319
DOI
10.1002/pssa.201329187
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE