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dc.contributor.author김태환-
dc.date.accessioned2018-03-28T05:30:35Z-
dc.date.available2018-03-28T05:30:35Z-
dc.date.issued2014-11-
dc.identifier.citationJournal of nanoscience and nanotechnology, 2014, 14(11), P.8215-8218en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2014/00000014/00000011/art00019-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/53269-
dc.description.abstractThe electrical characteristics of MOSFETs with a high-k dielectric layer were simulated by using a full three-dimensional technology computer-aided design simulator. The MOSFETs leakage current increased when their size decreased. The mobility variation mechanisms due to the polarization variation with the positive fixed charges in the high-k dielectric layer and with the negative trap charges in the SiO2 layer were clarified by using a modified mobility model of the universal model taking into account remote phonon scattering effects. The induced polarization in the high-k dielectric layer was dominantly attributed to the magnitude and the polarity of the charges in an interfacial layer. The mobility degradation was dominantly attributed to the polarization effects. The mobility values of the channel region in the MOSFETs, calculated by using the modified mobility model, were in reasonable agreement with their real mobility magnitudes. This result improves the enhancement of the electrical characteristic of the MOSFETs with a high-k layer.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467).en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.subjectMOSFETsen_US
dc.subjectPolarizationen_US
dc.subjectRemote Phonon Scatteringen_US
dc.subjectMobility Modelen_US
dc.subjectDegradation Mechanismen_US
dc.titleMobility Degradation Mechanisms of MOSFETs with a High-k Dielectric Layeren_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume14-
dc.identifier.doi10.1166/jnn.2014.9896-
dc.relation.page8215-8218-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorJung, Hyun Soo-
dc.contributor.googleauthorRyu, Ju Tae-
dc.contributor.googleauthorKim, Dong Hun-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2014033921-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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