Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon
- Title
- Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon
- Author
- 조준형
- Keywords
- CHARGE-DENSITY-WAVE
- Issue Date
- 2014-11
- Publisher
- American Physical Society
- Citation
- Physical Review Letters, 2014, 113(19), P.196802
- Abstract
- Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8 x 2 and metallic 4 x 1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.
- URI
- https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.196802http://hdl.handle.net/20.500.11754/53238
- ISSN
- 0031-9007; 1079-7114
- DOI
- 10.1103/PhysRevLett.113.196802; 10.1103/PhysRevLett.113.196802
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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