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Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device

Title
Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device
Other Titles
Ta-embedded TaOx
Author
전형탁
Keywords
METALLIC FILAMENT
Issue Date
2014-11
Publisher
Royal Society of Chemistry
Citation
RSC Advances, 2014, 4(105), P.61064-61067
Abstract
In this study, Ni/TaOx/NiSi and Ni/TaOx/Ta/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. In this study, Ni/TaOx/NiSi and Ni/TaOx/T/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2014/RA/C4RA10446C#!divAbstracthttp://hdl.handle.net/20.500.11754/53236
ISSN
2046-2069
DOI
10.1039/c4ra10446c
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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