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Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Title
Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
Author
전형탁
Keywords
THIN-FILMS
Issue Date
2012-12
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 30(1), 01A104
Abstract
Remote plasma atomic layer deposited (RPALD) Al2O3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al2O3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si+3 and Si+4, indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10(4) s. These results indicate that Al2O3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3639131]
URI
https://avs.scitation.org/doi/10.1116/1.3639131http://hdl.handle.net/20.500.11754/52980
ISSN
0734-2101
DOI
10.1116/1.3639131
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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