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dc.contributor.author전형탁-
dc.date.accessioned2018-03-27T05:08:31Z-
dc.date.available2018-03-27T05:08:31Z-
dc.date.issued2012-12-
dc.identifier.citationJOURNAL OF PHYSICAL CHEMISTRY C, 116(16), p.9180-9188en_US
dc.identifier.issn1932-7447-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/jp2117328-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/52978-
dc.description.abstractWe have investigated the effect of surface modification on the dispersion of nanodiamond seeds on the SiO2-coated Si substrate, to enable the ultrathin ultrananocrystalline diamond (UNCD) coating on the substrate, by direct current plasma-assisted chemical vapor deposition (DC-PACVD) using hydrogen-rich chemistry. The ultrasonically dispersed seed density on the SiO2-coated Si wafer was so much lower than that on the pristine Si wafer that the void-free ultrathin UNCD coating was impossible. For surface modification, we have exposed the substrate to (1) the hydrogen/hydrocarbon plasma in the DC-PACVD chamber or (2) the hydrocarbon atmosphere in the hot filament chemical vapor deposition (HF-CVD) chamber, prior to the ultrasonic seeding. The exposure to hydrocarbon or to its plasma greatly reduced the seed density, while exposure to hydrogen plasma drastically enhanced it by a factor of 6, which enabled a void-free ultrathin UNCD coating as thin as 30 nm. The UNCD film and the substrate surface before and after the surface treatment were characterized by XPS, NEXAFS, FTIR, Raman spectroscopy, HR-SEM, HR-TEM, EDX, and the zeta potential analyzer. The effects of the pretreatments on the seed density were explained by Si-OH or Si-CH3 termination and by the consequent change on (1) the zeta potentials of the substrate and (2) that of the nanodiamond particles in the seeding suspension.en_US
dc.description.sponsorshipThis work was supported by a grant (code No.: 2011K000174) from the 'Center for Nanostructured Materials and Technology' under '21st Century Frontier R&D Programs' of the Ministry of Education, Science and Technology, Korea. This work was also supported by an institutional program grant (2E22733) from the Korea Institute of Science and Technology.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USAen_US
dc.subjectultrananocrystallineen_US
dc.subjectdiamonden_US
dc.subjectfilmen_US
dc.subjectsynthesisen_US
dc.subjectdepositionen_US
dc.titleSynergistic Interaction between Substrate and Seed Particles in Ultrathin Ultrananocrystalline Diamond Film Nucleation on SiO2 with Controlled Surface Terminationen_US
dc.typeArticleen_US
dc.relation.no16-
dc.relation.volume116-
dc.identifier.doi10.1021/jp2117328-
dc.relation.page9180-9188-
dc.relation.journalJOURNAL OF PHYSICAL CHEMISTRY C-
dc.contributor.googleauthorLee, HakJoo-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.contributor.googleauthorLee, WookSeong-
dc.relation.code2012317861-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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