Results 1-5 of 5 (Search time: 0.001 seconds).
|2012-02||Measurement of internal electric field in GaN-based light-emitting diodes||신동수|
|2016-11||Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes||신동수|
|2019-03||Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes||신동수|
|2018-10||Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization||신동수|
|2018-05||Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation||신동수|