Results 1-7 of 7 (Search time: 0.002 seconds).
|2015-02||Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques||신동수|
|2015-02||Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes||신동수|
|2015-02||Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes||신동수|
|2015-02||Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities||신동수|
|2015-05||Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes||신동수|
|2015-10||Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes||신동수|
|2015-10||Non-thermal shielding effects on the Compton scattering power in astrophysical plasmas||신동수|