Results 1-6 of 6 (Search time: 0.001 seconds).
|2013-10||Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage||신동수|
|2013-05||Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis||신동수|
|2013-05||Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes||신동수|
|2013-05||Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes||신동수|
|2013-05||Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy||신동수|
|2013-10||Systematic Analysis of the Photocurrent Spectroscopy on InGaN/GaN Blue Light-Emitting Diodes||신동수|