| 2017-12 | Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes | 신동수 |
| 2015-02 | Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes | 신동수 |
| 2019-01 | Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters | 신동수 |
| 2013-05 | Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis | 신동수 |
| 2013-05 | Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy | 신동수 |
| 2015-05 | Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes | 신동수 |
| 2016-08 | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | 신동수 |
| 2012-03 | Efficiency droop in AlGaInP and GaInN light-emitting diodes | 신동수 |
| 2011-01 | An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes | 신동수 |
| 2019-03 | Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes | 신동수 |
| 2015-02 | Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities | 신동수 |
| 2012-06 | Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence | 신동수 |
| 2011-03 | An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas | 신동수 |
| 2018-02 | Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes | 신동수 |
| 2016-11 | Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes | 신동수 |
| 2012-03 | Gain-bandwidth relation of electroabsorption-modulated analogue fibre link: effect of photocurrent resistance | 신동수 |
| 2012-04 | GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화 | 신동수 |
| 2014-11 | Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes | 신동수 |
| 2016-04 | Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes | 신동수 |
| 2017-10 | Interactive study of electroreflectance and photocurrent spectra in InGaN/GaN-based blue LEDs | 신동수 |
| 2013-10 | Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage | 신동수 |
| 2013-05 | Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes | 신동수 |
| 2018-07 | Investigation of Luminance Degradation in Organic Light-Emitting Diodes by Impedance Spectroscopy | 신동수 |
| 2013-05 | Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes | 신동수 |
| 2014-03 | Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes | 신동수 |
| 2012-02 | Measurement of internal electric field in GaN-based light-emitting diodes | 신동수 |
| 2011-01 | Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model | 신동수 |
| 2014-09 | Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy | 신동수 |
| 2018-04 | Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature | 신동수 |
| 2018-10 | Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization | 신동수 |
