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Self-forming VOx layer as Cu diffusion barrier for low-k dielectrics

Title
Self-forming VOx layer as Cu diffusion barrier for low-k dielectrics
Author
전형탁
Keywords
Copper diffusion barrier; Self-forming barrier; Vanadium
Issue Date
2014-11
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
SURFACE & COATINGS TECHNOLOGY, 259, p.252-256
Abstract
A Cu-V alloy is reported as a material for use in a self-forming barrier process. The diffusion barrier property of a V-based self-formed layer was investigated on various low-k dielectrics. Cu-V alloy films were directly deposited on various low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), (200) and (220) peaks of the Cu-V alloys. Transmission electron microscopy showed that a uniform V-based interlayer self-formed at the interface after annealing. In order to evaluate the barrier property of the V-based interlayer, the thermal stability was measured with low-k dielectrics. The V-based interlayer formed on the low-k 3 dielectric that contained more oxygen had better thermal stability than that formed on the low-k 1 dielectric that contained less oxygen and more carbon. X-ray photoelectron spectroscopy analysis showed the chemical compositions of the self-formed layer. Furthermore, the results show that the formation of the V-based interlayers was strongly dominated by the oxygen concentration in the dielectric layers. (c) 2014 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S025789721400293Xhttp://hdl.handle.net/20.500.11754/52774
ISSN
0257-8972
DOI
10.1016/j.surfcoat.2014.04.003
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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