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Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating

Title
Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
Author
전형탁
Keywords
Cobalt; Atomic layer deposition; Direct plating; CCTBA; Copper interconnect
Issue Date
2014-11
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
SURFACE & COATINGS TECHNOLOGY, 259, p.98-101
Abstract
It is challenging to produce reliable Cu wiring on the nanometer scale for scaled-down devices. We studied the use of Co films deposited by plasma-enhanced atomic layer deposition (PEALD) using dicobalt hexacarbonyl tert-butylacetylene (CCTBA) as a precursor for Cu direct plating. Electrical properties of PEALD Co films of sub-20 nm thickness were determined by assessing continuities, morphologies, and impurities. To decrease the resistivity of Co films, a TaNx substrate was pre-treated with H-2 plasma and the flow rate of H-2 gas during CCTBA feeding and reactant feeding pulses was increased. Co films were deposited on a 3 nm-thick TaNx-covered SiO2 substrate with 24 nm-deep trenches, and Cu direct plating was successfully performed under conventional conditions. (C) 2014 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0257897214004071http://hdl.handle.net/20.500.11754/52767
ISSN
0257-8972
DOI
10.1016/j.surfcoat.2014.05.005
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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