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Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

Title
Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties
Author
박진성
Keywords
Copper oxide; Atomic layer deposition; Ozone; Thin film transistors; p-type; Annealing
Issue Date
2016-04
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 42, NO 4, Page. 5517-5522
Abstract
Copper oxide (CuOx) films were grown at a relatively low temperature (100 degrees C) by atomic layer deposition (ALD). Hexafluoroacetyl-acetonateCu(I)(3,3-Dimethyl-1-butene) ((hfac)Cu-(I)(DMB)) and ozone (O-3) were used as the copper precursor and oxidant, respectively. It is shown that stable phases of CuO are obtained through rapid thermal annealing (RTA) in air. After annealing at various temperatures (200-500 degrees C), different p-type band structures and electron binding information are obtained. X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) studies indicate that the major copper oxidation state changes from 1(+) to 2(+) during thermal treatment. Thin film transistors (TFTs) incorporating the ALD-grown CuOx semiconductors are evaluated, and an unusually high p-type device performance is observed, with a field effect mobility of 5.6 cm(2)/V s after annealing at 300 degrees C. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0272884215024074?via%3Dihubhttp://hdl.handle.net/20.500.11754/52518
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2015.12.109
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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