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The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition

Title
The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
Author
박진성
Keywords
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ANNEALING; CARRIER MOBILITY; DEPOSITS; ELECTRICAL PROPERTIES; INSTABILITY; METALS; OXYGEN; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
Issue Date
2014-09
Publisher
AMERICAN INSTITUTE OF PHYSICS
Citation
Applied Physics Letters, 2014, 105(9), P.092103-1~092103-4
Abstract
We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO2 films as a function of the annealing temperature. The ZTO and ZnO, except for SnO2, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm2/V s and a negative bias instability of 0.2 V. VC 2014 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/10.1063/1.4895102http://hdl.handle.net/20.500.11754/52378
ISSN
0003-6951
DOI
10.1063/1.4895102
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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