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Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

Title
Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors
Author
정재경
Keywords
Indium zinc oxides; Low temperatures; Polymer gate insulator
Issue Date
2014-09
Publisher
RSC Publishing
Citation
RSC Advances, 2014, 4(86), P.45742-45748
Abstract
Indium zinc oxide (IZO) thin film transistors (TFTs) with poly(4-vinylphenol-co-methylmethacrylate) (PVP-co-PMMA) gate insulators were fabricated at a low temperature (250 °C). The bottom gate IZO TFTs with a PVP-co-PMMA gate electric film exhibited inferior device performance to the top gate IZO TFTs, which was attributed to sputtering damage of the underlying polymer gate dielectric film during IZO channel formation. The charge carrier transport and interface properties of the IZO TFTs could be further improved by introducing a ZrO2 precursor to the polymer gate insulator. The ZrO2 molecules were well dispersed in the polymer film. The resulting hybrid dielectric film showed a higher capacitance and a smoother morphology than the PVP-co-PMMA dielectric film. The hybrid dielectric-gated IZO TFT had a high mobility of 28.4 cm2 V?1 s?1, low subthreshold gate swing of 0.70 V per decade, and a high Ion/off ratio of 4.0 × 107.
URI
http://pubs.rsc.org/en/content/articlelanding/2014/ra/c4ra08548e#!divAbstracthttp://hdl.handle.net/20.500.11754/52373
ISSN
2046-2069
DOI
10.1039/C4RA08548E
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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