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COLLEGE OF ENGINEERING SCIENCES[E](공학대학)
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Issue Date
Title
Author(s)
2019-09
Ultrasound-induced break-in method for an incoming polyvinyl acetal (PVA) brush used during post-CMP cleaning process
김태곤
2019-12
Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing
김태곤
2019-01
Post-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applications
김태곤
2019-08
Study on possible root causes of contamination from an incoming PVA brush during post-CMP cleaning
김태곤
2019-10
Investigation of particle agglomeration with in-situ generation of oxygen bubble during the tungsten chemical mechanical polishing (CMP) process
김태곤
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Break-in process
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PVA brush
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Abrasive particles agglomeration
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ADS surfactant
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Fe(NO3)(3)
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InGaAs
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Large abrasive particles ratio
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Microelectronics - Semiconductor ...
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O-2 bubble
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Organic contaminants
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