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COLLEGE OF ENGINEERING SCIENCES[E](공학대학)
ELECTRICAL ENGINEERING(전자공학부)
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Results 1-3 of 3 (Search time: 0.001 seconds).
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2016-02
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 x nm technology
백상현
2015-02
Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technology
백상현
2015-04
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams
백상현
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logic upset cluster
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TCAD device model
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