Browsing "ELECTRICAL ENGINEERING(전자공학부)" byAuthor오재응

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Showing results 1 to 30 of 112

Issue DateTitleAuthor(s)
2011-12A load-displacement prediction for a bended slotted disc using the energy method오재응
1999-04A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure오재응
2015-11A Newly Advanced Anti-Vibration Pad With a Phase Balancer Designed by Analysis of Washing Machine Behaviors오재응
2019-01A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p-i-n GaN nanorods오재응
2011-12A study on axle gear whine noise reduction with deflection test오재응
2016-11A Study on Strain and Shape of GaN Nanorods with Variation of Si Concentration Grown on Patterned Si(111) Substrates오재응
1997-09Active noise control with the active muffler in automotive exhaust systems오재응
2020-11Ag Nanowire-Plasmonic-Assisted Charge Separation in Hybrid Heterojunctions of Ppy-PEDOT:PSS/GaN Nanorods for Enhanced UV Photodetection오재응
2007-06AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성오재응
2007-06AlSb/InAs/AlSb 양자우물 구조에서 Insb-like 계면의 전기적특성오재응
2011-07Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies오재응
2016-09Analysis of structure-borne noise in vehicles by modifying the stiffness of joint parts in the suspension system and vehicle body오재응
1998-05Barrier metal properties of amorphous tantalum nitride thin films between platinum and silicon deposited using remote plasma metal organic chemical vapor method오재응
2005-06Blue-light emission from GaN/AlGaN multiple quantum wells with an Al 0.5Ga0.5N perturbation monolayers grown by molecular beam epitaxy오재응
2004-05Blue-light emission from molecular-beam-epitaxially grown GaN/Al0.5Ga0.5N multiple quantum wells with a perturbating layer of Al0.5Ga0.5N monolayers오재응
2000-12Cathodoluminescence Characterization of GaN Thick Films Grown by Using the HVPE Method오재응
2021-02Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector오재응
2021-03Current-voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector오재응
2005-04Deep level defects in Si-doped AlXGa1-XN films grown by molecular-beam epitaxy오재응
2005-11Deep level related to a two-dimensional electron gas region in Al xGa 1-xN/GaN heterointerfaces오재응
2005-04Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy오재응
2007-04Dependence of the AlSb buffers on GaSb/GaAs(0 0 1) heterostructures오재응
2007-04Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures오재응
2018-09Determination of effective parameters for diagnosis and classification of air-conditioning refrigerant noise by logistic regression오재응
2015-01Development of a sound quality index for the wash cycle process of front-loading washing machines considering the impacts of individual noise sources오재응
2000-06Direct Observation of Strong Quantum-Confined Stark Effect in Vertically-Stacked Quantum Dots at Room Temperature오재응
2006-07Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study오재응
2006-07Effect of two-step growth on the heteroepitaxial growth of Insb thin film on Si(001)substrate:A transmission electron microscopy study오재응
2005-12Effects of different insertion layer thicknesses on structural and optical properties of GaN/Al0.5Ga0.5N/GaN coupled multiquantum wells오재응
2015-11Effects of magnetic field input cycle and peptizer on the MR effect of magneto-rheological elastomer based on natural rubber오재응

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