Results 1-7 of 7 (Search time: 0.082 seconds).
|2016-05||Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 degrees C) by Al2O3 incorporation||박태주|
|2016-09||Strategic PbS quantum dot-based multilayered photoanodes for high efficiency quantum dot-sensitized solar cells||박태주|
|2016-03||Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation||박태주|
|2016-08||Eliminated Phototoxicity of TiO2 Particles by an Atomic-Layer-Deposited Al2O3 Coating Layer for UV-Protection Applications||박태주|
|2016-08||Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates||박태주|
|2016-04||Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts||박태주|
|2016-08||Observation of Titania and Titanate Phase Changes in Oxidation-Controlled ZnO/TiN and HfO2/TiN Thin Films: An X-ray Absorption Spectroscopy Study||박태주|