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High-Performance Triethylsilylethynyl Anthradithiophene Transistors Prepared without Solvent Vapor Annealing: The Effects of Self-Assembly during Dip-Coating

Title
High-Performance Triethylsilylethynyl Anthradithiophene Transistors Prepared without Solvent Vapor Annealing: The Effects of Self-Assembly during Dip-Coating
Author
장재영
Keywords
soluble acenes; evaporation-induced self-assembly; without solvent-vapor annealing solution-process; dip-coating; organic field-effect transistors
Issue Date
2013-03
Publisher
Amer Chemical SOC
Citation
ACS Applied Materials & Interfaces, 2013, 5(6), P.2146-2154
Abstract
Solution-processable small-molecule organic semiconductors have recently attracted significant attention for use as the active channel layers in organic field-effect transistors due to their good intrinsic charge carrier mobility and easy processability. Dip-coating is a good method for optimizing the film morphology and molecular ordering of the small-molecular semiconductors because the drying speed can be quantitatively controlled at the air-solution-substrate contact line. Here, we report the preparation of highly crystalline triethylsilylethynyl-anthradithiophene (TES-ADT) crystal arrays that exhibit an excellent field-effect mobility (up to 1.8 cm(2)/(V s)) via an optimized one-step dip-coating process. High-quality TES-ADT crystals were grown without solvent vapor annealing postprocessing steps, which were previously thought to be essential for improving the morphology, crystallinity, and electrical characteristics of TES-ADT thin films. An interesting correlation between the optimal pull-out rate and the self-assembly tendencies of some soluble acene semiconductors was observed, and the origin of the correlation was investigated. Our work demonstrates an alternative simple approach to achieving highly crystalline TES-ADT thin films, and further proposes a prospective method for optimizing the formation of thin films via the molecular self-assembly of soluble acenes.
URI
https://pubs.acs.org/doi/10.1021/am303192bhttp://hdl.handle.net/20.500.11754/52133
ISSN
1944-8244
DOI
10.1021/am303192b
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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