Improved Electrical Properties of Indium Gallium Zine Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode
- Title
- Improved Electrical Properties of Indium Gallium Zine Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode
- Author
- 김태환
- Keywords
- a-IGZO TFT; AZO/Ag/AZO transparent electrode; Field effect mobility; Schottky barrier
- Issue Date
- 2013-03
- Publisher
- 한국센서학회
- Citation
- 센서학회지, 2013, 22(2), P.105-110p
- Abstract
- We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 μm) showed a subs-threshold swing of 3.78V/dec, a minimum off-current of 10-12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ratio of 9X 109. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.
- URI
- http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=HSSHBT_2013_v22n2_105http://hdl.handle.net/20.500.11754/52038
- ISSN
- 1225-5475
- DOI
- 10.5369/JSST.2013.22.2.105
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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