37 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박진성-
dc.date.accessioned2018-03-25T14:39:35Z-
dc.date.available2018-03-25T14:39:35Z-
dc.date.issued2014-12-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES,권: 61 ,호: 12 ,페이지: 4132-4136en_US
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://scholar.google.co.kr/scholar?q=The+Influence+of+Oxygen+High-Pressure+Annealing+on+the+Performance+and+Bias+Instability+of+Amorphous+Ge-In-Ga-O+Thin-Film+Transistors&hl=ko&as_sdt=0&as_vis=1&oi=scholart&sa=X&ved=0ahUKEwi7yrDdotnYAhXDi5QKHTWaDQEQgQMIIzAA-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/51992-
dc.description.abstractThe effects of oxygen high-pressure annealing (O-2 HPA) on the performance and instability of amorphous Ge-In-Ga-O (a-GIGO) thin-film transistors (TFTs) were examined. The TFTs with HPA under 30 atm O-2 ambient exhibited consistently better stability against the applied temperature stress and positive gate bias stress. We demonstrate that the superior stability of the HPA-treated device can be correlated with the evolution of electronic structure in a-GIGO thin films, as measured by spectroscopic ellipsometry, which reveals the significantly reduced band edge states below the conduction band by the O-2 HPA treatment. Based on the Meyer-Neldel rule, the total density of subgap states energy distribution, including the interfacial and semiconductor bulk trap densities, was also extracted and compared, which can support the experimental observatioen_US
dc.description.sponsorshipThis work was supported in part by the National Research Foundation (NRF) of Korea through the Ministry of Education, Science and Technology of Korea (MEST) under Grant 2011-0028819, in part by MEST, NRF, through the Korean Government under Grant 2012011730, and in part by the Global Frontier Research and Development Program under Grant 2013-073298 within the Center for Hybrid Interface Materials through the Ministry of Science, ICT and Future Planning. The review of this paper was arranged by Editor H.-S. Tae.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USAen_US
dc.subjectAmorphous oxide semiconductor (AOS)en_US
dc.subjecthigh-pressure annealing (HPA)en_US
dc.subjectpositive-bias temperature stress (PBTS)en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleThe Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.relation.no12-
dc.relation.volume61-
dc.identifier.doi10.1109/TED.2014.2359469-
dc.relation.page4132-4136-
dc.relation.journalIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.contributor.googleauthorAhn, Byung Du-
dc.contributor.googleauthorKim, Hyun-Suk-
dc.contributor.googleauthorRim, You Seung-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorKim, Hyun Jae-
dc.relation.code2014030798-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE