31 0

The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film Transistors

Title
The Influence of Oxygen High-Pressure Annealing on the Performance and Bias Instability of Amorphous Ge-In-Ga-O Thin-Film Transistors
Author
박진성
Keywords
Amorphous oxide semiconductor (AOS); high-pressure annealing (HPA); positive-bias temperature stress (PBTS); thin-film transistors (TFTs)
Issue Date
2014-12
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES,권: 61 ,호: 12 ,페이지: 4132-4136
Abstract
The effects of oxygen high-pressure annealing (O-2 HPA) on the performance and instability of amorphous Ge-In-Ga-O (a-GIGO) thin-film transistors (TFTs) were examined. The TFTs with HPA under 30 atm O-2 ambient exhibited consistently better stability against the applied temperature stress and positive gate bias stress. We demonstrate that the superior stability of the HPA-treated device can be correlated with the evolution of electronic structure in a-GIGO thin films, as measured by spectroscopic ellipsometry, which reveals the significantly reduced band edge states below the conduction band by the O-2 HPA treatment. Based on the Meyer-Neldel rule, the total density of subgap states energy distribution, including the interfacial and semiconductor bulk trap densities, was also extracted and compared, which can support the experimental observatio
URI
https://scholar.google.co.kr/scholar?q=The+Influence+of+Oxygen+High-Pressure+Annealing+on+the+Performance+and+Bias+Instability+of+Amorphous+Ge-In-Ga-O+Thin-Film+Transistors&hl=ko&as_sdt=0&as_vis=1&oi=scholart&sa=X&ved=0ahUKEwi7yrDdotnYAhXDi5QKHTWaDQEQgQMIIzAAhttp://hdl.handle.net/20.500.11754/51992
ISSN
0018-9383; 1557-9646
DOI
10.1109/TED.2014.2359469
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE