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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Title
Author(s)
2015-01
Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer
최창환
2015-09
Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors
최창환
2015-11
Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics
최창환
2015-11
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing
최창환
2015-11
The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack
최창환
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2-DIMENSIONAL CRYSTALS
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ALD Al2O3
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Ammonium polysulfide
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Atomic layer deposition
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DEPOSITION
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DICHALCOGENIDE NANOSHEETS
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EOT
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Fermi level unpinning
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gallium arsenide
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GaN device
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