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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 1-4 of 4 (Search time: 0.001 seconds).
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Issue Date
Title
Author(s)
2018-03
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
최창환
2018-08
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device
최창환
2020-01
Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
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2019-08
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
최창환
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ALD
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BEHAVIORS
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DEVICES
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GROWTH
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Hafnium oxide
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HfO2
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INTERFACE
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MECHANISM
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MECHANISMS
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MEMORY
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2020
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