Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-23T09:00:03Z | - |
dc.date.available | 2018-03-23T09:00:03Z | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, 권: 105, 호: 23 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4903243 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51674 | - |
dc.description.abstract | Nonvolatile memory devices based on CuInS2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0V for sweep voltages of +/- 3, +/- 5, and +/- 7V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 x 10(-10) was maintained for 8 x 10(3) cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 x 10(6) cycles converged to 2.40 x 10(-10), indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams. (C) 2014 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.title | Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites | en_US |
dc.type | Article | en_US |
dc.relation.no | 23 | - |
dc.relation.volume | 105 | - |
dc.identifier.doi | 10.1063/1.4903243 | - |
dc.relation.page | 1-3 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Zhou, Yang | - |
dc.contributor.googleauthor | Yun, Dong Yeol | - |
dc.contributor.googleauthor | Kim, Sang Wook | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2014025338 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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