Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-23T07:28:47Z | - |
dc.date.available | 2018-03-23T07:28:47Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, 권: 53, 호: 11 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/JJAP.53.115201/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51517 | - |
dc.description.abstract | High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion of as-grown InGaP/InGaAIP multiple quantum wells (MQWs) appeared to be due to the small thickness of the alloyed layers, and that their distortion was relaxed owing to the high atomic mobility. High-angle annular dark-field scanning transmission electron microscopy images demonstrated that the chemical intermixing of Ga and Al atoms between the InAlP and InGaP alloy layers due to thermal annealing relaxed the stress of the InGaAIP layer. The atomic arrangements of the as-grown and annealed MQWs are described on the basis of the experimental results. (C) 2014 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467) and also by the Korea Basic Science Institute grant to J.-G. Kim (D33804). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.title | Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment | en_US |
dc.title.alternative | InGaAIP multiple quantum wells due to thermal treatment | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 53 | - |
dc.identifier.doi | 10.7567/JJAP.53.115201 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Shin, Jae Won | - |
dc.contributor.googleauthor | Jeong, Hu Young | - |
dc.contributor.googleauthor | Yoo, Seung | - |
dc.contributor.googleauthor | Lee, Seok-Hoon | - |
dc.contributor.googleauthor | Han, Jun Hee | - |
dc.contributor.googleauthor | Lee, Jeong Yong | - |
dc.contributor.googleauthor | Ahn, Jun Sung | - |
dc.contributor.googleauthor | Park, Chang Young | - |
dc.contributor.googleauthor | Park, Kwang Wook | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2014032123 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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