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Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment

Title
Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment
Other Titles
InGaAIP multiple quantum wells due to thermal treatment
Author
김태환
Issue Date
2014-11
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, 권: 53, 호: 11
Abstract
High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion of as-grown InGaP/InGaAIP multiple quantum wells (MQWs) appeared to be due to the small thickness of the alloyed layers, and that their distortion was relaxed owing to the high atomic mobility. High-angle annular dark-field scanning transmission electron microscopy images demonstrated that the chemical intermixing of Ga and Al atoms between the InAlP and InGaP alloy layers due to thermal annealing relaxed the stress of the InGaAIP layer. The atomic arrangements of the as-grown and annealed MQWs are described on the basis of the experimental results. (C) 2014 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.53.115201/metahttp://hdl.handle.net/20.500.11754/51517
ISSN
0021-4922; 1347-4065
DOI
10.7567/JJAP.53.115201
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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