Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment
- Title
- Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment
- Other Titles
- InGaAIP multiple quantum wells due to thermal treatment
- Author
- 김태환
- Issue Date
- 2014-11
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, 권: 53, 호: 11
- Abstract
- High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion of as-grown InGaP/InGaAIP multiple quantum wells (MQWs) appeared to be due to the small thickness of the alloyed layers, and that their distortion was relaxed owing to the high atomic mobility. High-angle annular dark-field scanning transmission electron microscopy images demonstrated that the chemical intermixing of Ga and Al atoms between the InAlP and InGaP alloy layers due to thermal annealing relaxed the stress of the InGaAIP layer. The atomic arrangements of the as-grown and annealed MQWs are described on the basis of the experimental results. (C) 2014 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/JJAP.53.115201/metahttp://hdl.handle.net/20.500.11754/51517
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.53.115201
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML