Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-03-23T06:06:53Z | - |
dc.date.available | 2018-03-23T06:06:53Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | Current applied physics : the official journal of the Korean Physical Society,v.14,no.3 2014년, pp.223 - 226 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1567173913004069?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51355 | - |
dc.description.abstract | Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at E-c-0.51 eV and E-c-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer. (C) 2013 Elsevier B. V. All rights reserved. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education (NRF-2011-0012006) and by the New & Renewable Energy Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean government (MOTIE) (No. 2013010010120). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | ZnO | en_US |
dc.subject | Defect | en_US |
dc.subject | Photoresponse | en_US |
dc.title | Deep level states and negative photoconductivity in n-ZnO/p-Si hetero-junction diodes | en_US |
dc.title.alternative | p-Si hetero-junction diodes | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 14 | - |
dc.identifier.doi | 10.1016/j.cap.2013.11.026 | - |
dc.relation.page | 223-226 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Cho, Seong-Gook | - |
dc.contributor.googleauthor | Nahm, Tschang-Uh | - |
dc.contributor.googleauthor | Kim, Eun-Kyu | - |
dc.relation.code | 2014028061 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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