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dc.contributor.author박재근-
dc.date.accessioned2018-03-23T05:54:11Z-
dc.date.available2018-03-23T05:54:11Z-
dc.date.issued2014-04-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 권: 64 호: 7 , 페이지: L949-L953en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttps://link.springer.com/article/10.3938/jkps.64.949-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/51330-
dc.description.abstractWe developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e., maximum memory characteristics, such as a retention-time of > 1 x 10(5) s with a memory margin of 1 x 10(4) and program/erase cycles of > 10(3) with a memory margin of 1.3 x 10(4), which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%)en_US
dc.description.sponsorshipThis work was financially supported by the Brain Korea 21 Plus Program in 2014 and the Industrial Strategic Technology Development Program (10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherKOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREAen_US
dc.subjectRESISTIVE SWITCHING CHARACTERISTICSen_US
dc.subjectBIPOLARen_US
dc.subjectUNIPOLARen_US
dc.titleConductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrodeen_US
dc.typeArticleen_US
dc.relation.volume64-
dc.identifier.doi10.3938/jkps.64.949-
dc.relation.page949-953-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorSeung, Hyun-Min-
dc.contributor.googleauthorSong, Myung-Jin-
dc.contributor.googleauthorPark, Jea-Gun-
dc.contributor.googleauthorKwon, Kyoung-Cheol-
dc.relation.code2014034856-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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