Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-23T05:54:11Z | - |
dc.date.available | 2018-03-23T05:54:11Z | - |
dc.date.issued | 2014-04 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 권: 64 호: 7 , 페이지: L949-L953 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938/jkps.64.949 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51330 | - |
dc.description.abstract | We developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e., maximum memory characteristics, such as a retention-time of > 1 x 10(5) s with a memory margin of 1 x 10(4) and program/erase cycles of > 10(3) with a memory margin of 1.3 x 10(4), which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%) | en_US |
dc.description.sponsorship | This work was financially supported by the Brain Korea 21 Plus Program in 2014 and the Industrial Strategic Technology Development Program (10039191, The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA | en_US |
dc.subject | RESISTIVE SWITCHING CHARACTERISTICS | en_US |
dc.subject | BIPOLAR | en_US |
dc.subject | UNIPOLAR | en_US |
dc.title | Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode | en_US |
dc.type | Article | en_US |
dc.relation.volume | 64 | - |
dc.identifier.doi | 10.3938/jkps.64.949 | - |
dc.relation.page | 949-953 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Seung, Hyun-Min | - |
dc.contributor.googleauthor | Song, Myung-Jin | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.contributor.googleauthor | Kwon, Kyoung-Cheol | - |
dc.relation.code | 2014034856 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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