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Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode

Title
Conductive-bridging Random-access Memory Cell Fabricated with a Top Ag Electrode, a Polyethylene Oxide Layer, and a Bottom Pt Electrode
Author
박재근
Keywords
RESISTIVE SWITCHING CHARACTERISTICS; BIPOLAR; UNIPOLAR
Issue Date
2014-04
Publisher
KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 권: 64 호: 7 , 페이지: L949-L953
Abstract
We developed a conductive-bridging random-access memory cell with a sandwiched structure of an Ag top electrode, an electrolyte (polyethylene oxide: PEO), and a Pt bottom electrode on a 250-nm hole pattern. The cell demonstrated the bipolar switching behavior of resistive randomaccess memory. The nonvolatile characteristics of the cell strongly depended on the wt% (PEO thickness): i.e., maximum memory characteristics, such as a retention-time of > 1 x 10(5) s with a memory margin of 1 x 10(4) and program/erase cycles of > 10(3) with a memory margin of 1.3 x 10(4), which are very close to thereof a commercial memory cell, were observed at a specific wt% of PEO (0.4 wt%)
URI
https://link.springer.com/article/10.3938/jkps.64.949http://hdl.handle.net/20.500.11754/51330
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.64.949
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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