Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-03-23T05:45:18Z | - |
dc.date.available | 2018-03-23T05:45:18Z | - |
dc.date.issued | 2013-10 | - |
dc.identifier.citation | THIN SOLID FILMS, 2013, 545, P.517-520 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609013012534?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51314 | - |
dc.description.abstract | We fabricated n-ZnO/p-Si photodiodes by ultra-high vacuum sputtering that were highly responsive to violet-green light illumination at low operating voltages. Under illumination with light at 420 nm, the maximum photoresponsivity of the photodiodes was about 0.55 A/W at -8 V. As the ZnO film thickness increased from 150 nm to 500 nm, the photoresponsivity of the diodes to the wavelength range of 370-560 nm increased markedly, while the absorption bandwidth decreased. In particular, a slow photo-response was observed under light between the wavelengths of 540-560 nm. We speculate that the high photoresponsivity and slow photoresponse of the synthesized diodes are due to shallow and deep acceptor states originating from zinc vacancy defects in the ZnO thin film, respectively. (C) 2013 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This study was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2011-0012006). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND | en_US |
dc.subject | Sputtering | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | ZINC-OXIDE | en_US |
dc.subject | NANOWIRES | en_US |
dc.subject | PHOTODETECTORS | en_US |
dc.subject | DENSITY | en_US |
dc.title | Photoresponse of n-ZnO/p-Si photodiodes to violet-green bandwidth light caused by defect states | en_US |
dc.title.alternative | p-Si photodiodes to violet-green bandwidth light caused by defect states | en_US |
dc.type | Article | en_US |
dc.relation.volume | 545 | - |
dc.identifier.doi | 10.1016/j.tsf.2013.07.068 | - |
dc.relation.page | 517-520 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Cho, Seong Gook | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2013012183 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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