26 0

Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions

Title
Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions
Author
이승백
Keywords
PERPENDICULAR-ANISOTROPY; EFFECT TRANSISTOR; PLASMA; ELEMENTS
Issue Date
2012-12
Publisher
American Vacuum Society; 1999
Citation
Journal of Vacuum Science & Technology. B, 2012, 30(6), P.06FA01
Abstract
The authors have demonstrated fabrication of 30 nm diameter perpendicular anisotropy magnetic tunnel junctions (MTJs) using negative electron-beam resist (NER) as the ion beam etching (IBE) hard mask. The NER pillar of 30 nm diameter and 105 nm thickness was fabricated by electron-beam lithography. The redeposition of the MTJ etching debris generated during the IBE on the outer surface of the NER pillar increased the lateral etch resistance of the resist polymer, allowing the edge profile to remain constant for the duration of the MTJ etching, resulting in a vertical MTJ sidewall profile. A multistep IBE (repetition of 45 degrees primary etching and 30 degrees secondary etching) was conducted to reduce the MTJ sidewall redeposition while reducing mechanical damage. The measurement results showed a tunnel magneto-resistance ratio of 22% at 30 nm junction diameter. (C) 2012 American Vacuum Society. [http://dx.doi.org.access.hanyang.ac.kr/10.1116/1.4767123]
URI
https://avs.scitation.org/doi/10.1116/1.4767123http://hdl.handle.net/20.500.11754/51087
ISSN
1071-1023; 2166-2746
DOI
10.1116/1.4767123
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE