Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2018-03-23T00:06:50Z | - |
dc.date.available | 2018-03-23T00:06:50Z | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 52, NO 4, Page. 2081-2088 | en_US |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.issn | 1558-1713 | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/7426339/ | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/50885 | - |
dc.description.abstract | We investigate the influence of p-(Al) GaN growth temperature (T-g) on the optoelectronic performances of InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs). We systematically combine various characterization techniques, such as current-voltage, current-light output power, capacitance-voltage (C-V) under forward and reverse biases, photocurrent and electroreflectance (ER) spectroscopies, temperature-dependent electroluminescence, and the internal quantum efficiency (IQE). From the experimental analyses, it is shown that increasing T-g induces: 1) the reduced optical loss by the improved crystal quality of the p-GaN layer (improved light extraction efficiency) and 2) the decreased IQE due to the Mg diffusion from the p-(Al) GaN layer to the MQW region. This paper demonstrates that the fine control of the Mg diffusion from the p-GaN layer to the InGaN/GaN MQW region is the key factor for achieving highly efficient blue LEDs. Moreover, a method of estimating the Mg diffusion length is proposed for the first time by analyzing both the C-V curves and the ER spectra under reverse biases. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Characterization | en_US |
dc.subject | light-emitting diode | en_US |
dc.subject | efficiency | en_US |
dc.subject | optical loss | en_US |
dc.subject | Mg diffusion | en_US |
dc.title | Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 52 | - |
dc.identifier.doi | 10.1109/JQE.2016.2538730 | - |
dc.relation.page | 2081-2088 | - |
dc.relation.journal | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.relation.code | 2016002562 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | dshin | - |
dc.identifier.orcid | http://orcid.org/0000-0002-0863-9138 | - |
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